Semiconductor structure and fabrication method thereof

ABSTRACT

A method for fabrication of a semiconductor device is provided. A first type doped body region is formed in a first type substrate. A first type heavily-doped region is formed in the first type doped body region. A second type well region and second type bar regions are formed in the first type substrate with the second type bar regions between the second type well region and the first type doped body region. The first type doped body region, the second type well region, and each of the second type bar regions are separated from each other by the first type substrate. The second type bar regions are inter-diffused to form a second type continuous region adjoining the second type well region. A second type heavily-doped region is formed in the second type well region.

CROSS REFERENCE TO RELATED APPLICATIONS

This Application claims priority of Taiwan Patent Application No.97151390, filed on Dec. 30, 2008, the entirety of which is incorporatedby reference herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor structure andfabrication method thereof.

2. Description of the Related Art

For current integrated circuit development, controllers, memories,low-voltage (LV) circuits and high-voltage (HV) power devices are beingintegrated into a single chip, referred to as a single-chip system. Forexample, to handle high voltage and current, double-diffused metal oxidesemiconductor (DMOS) transistors, frequently used as conventional powerdevices, operate with low on-resistance while sustaining high voltage.Thus, lateral double-diffused metal oxide semiconductor (LDMOS)transistors in particular, with a simple structure, are beingincorporated into VLSI logic circuits.

However, the surface field of LDMOS transistors limits the voltagetolerance therein. Moreover, when operating an LDMOS device of aninterdigitated structure, a high electric field occurring adjacent tothe tip of a finger-shaped source results in decreased breakdown voltageof the device. Particularly, a high electric field, caused fromscaling-down of related devices, decreasing device size as well as widthof the source or curvature radius of the finger end, results in a veryserious decrease of breakdown voltage. However, if the width of thefinger shaped source is widened to enlarge the curvature radius of thefinger end in order to increase the breakdown voltage and eliminate theproblem mentioned above, layout flexibility of the device is sacrificed,thus hindering development for further scaling-down of related devices.

An improved semiconductor device ameliorating the disadvantages of theconventional technology is desirable.

BRIEF SUMMARY OF INVENTION

A detailed description is given in the following embodiments withreference to the accompanying drawings.

The invention provides a semiconductor structure and method forfabricating the same. In an embodiment of the method for fabricating thesemiconductor structure, a first type doped body region is formed in afirst type substrate. A first type heavily-doped region is formed in thefirst type doped body region. A second type well region and second typebar regions are formed in the first type substrate with the second typebar regions between the second type well region and the first type dopedbody region. The first type doped body region, the second type wellregion, and each of the second type bar regions are separated from eachother by the first type substrate. The second type bar regions areinter-diffused to form a second type continuous region adjoining thesecond type well region. A second type heavily-doped region is formed inthe second type well region.

In an embodiment of the semiconductor structure of the presentinvention, a first type body doped region is disposed on the first typesubstrate. A first type heavily-doped region is disposed on the firsttype body doped region. A second type well region is disposed on thefirst type substrate. A plurality of second type bar regions is disposedbetween the second type well region and the first type body dopedregion. The first type body doped region, the second type well region,and each of the second type bar regions are separated to one another bythe first type substrate. A second type heavily-doped region is disposedon the second type well region. An isolation structure is disposed onthe first type substrate between the first type heavily-doped region andsecond type heavily-doped region. A gate structure is disposed on thefirst type substrate between the first type heavily-doped region andisolation structure.

In another embodiment of the semiconductor structure, a first type bodydoped region is disposed on a first type substrate. A first typeheavily-doped region is disposed on the first type body doped region. Asecond type well region is disposed on the first type substrate. Adiffused second type well region is disposed between the second typewell region and first type body doped region and adjoined to the secondtype well region. A second type impurity concentration of the diffusedsecond type well region is lower than a second type impurityconcentration of the second type well region. A second typeheavily-doped region is disposed on the second type well region. Anisolation structure is disposed on the diffused second type well region.A gate structure on the first type substrate is disposed between thefirst type heavily-doped region and isolation structure.

BRIEF DESCRIPTION OF DRAWINGS

The present invention can be more fully understood by reading thesubsequent detailed description and examples with references made to theaccompanying drawings, wherein:

FIG. 1 is a top view of the semiconductor structure of one embodiment ofthe invention.

FIG. 2 is a cross-section view of the semiconductor structure along thedotted line AA′ in FIG. 1.

FIG.3 is a cross-section view of the semiconductor structure along thedotted line BB′ in FIG. 1.

FIGS. 4 to 9 are cross-section views illustrating the method for formingthe semiconductor structure of one embodiment of the invention.

DETAILED DESCRIPTION OF INVENTION

The following description is of the best-contemplated mode of carryingout the invention. This description is made for the purpose ofillustrating the general principles of the invention and should not betaken in a limiting sense. The scope of the invention is best determinedby reference to the appended claims.

Embodiments of the present invention provide a semiconductor structure.References will be made in detail to the present embodiments, examplesof which are illustrated in the accompanying drawings. Whereverpossible, the same reference numbers are used in the drawings and thedescriptions to refer to the same or like parts. In the drawings, theshape and thickness of one embodiment may be exaggerated for clarity andconvenience. The descriptions will be directed in particular to elementsforming a part of, or cooperating more directly with, apparatus inaccordance with the present invention. It is to be understood thatelements not specifically shown or described may take various forms wellknown to those skilled in the art. Further, when a layer is referred toas being on another layer or “on” a substrate, it may be directly on theother layer or on the substrate, or intervening layers may also bepresent.

FIG. 1 is a top view of the semiconductor structure of an embodiment ofthe invention. FIG. 2 is a cross-section view of the semiconductorstructure along the dotted line AA′ in FIG. 1. FIG.3 is a cross-sectionview of the semiconductor structure along the dotted line BB′ in FIG. 1.

Referring to FIG. 2 and FIG. 3, the semiconductor structure comprises aP--type substrate 10. An N-type well region 11 and P⁻-type body dopedregion 16 is formed in the P⁻-type substrate 10. A P⁺-type doped region13 is disposed in the substrate surface on a P⁻-type body doped region16. The P⁺-type doped region 13 may be regarded as an NLDMOS channelregion. An N⁺-type doped region 14 is disposed in the substrate surfaceon the N-type well region 11. In addition, an isolation structure 20 andgate structure 40 is formed on the P⁻-type substrate 10. The gatestructure 40 is adjacent to the P⁺-type doped region 13. The isolationstructure 20 is disposed between the gate structure 40 and the N⁺-typedoped region 14. The difference in FIG. 2 and FIG. 3 is that thesemiconductor shown in FIG. 2 comprises an N⁺-type doped region 14Adeposited between the N-type well region 11 and P⁺-type doped region 13.

FIG. 1 shows the layout of a P⁻-type substrate 10, a P⁺-type dopedregion 13, and a N⁺-type doped region 14 of a semiconductor structure.Moreover, pads 100A and 100B are disposed on the P⁺-type doped region 13and the N⁺-type doped region 14 respectively. For simplification, otherelements in FIGS. 2 and 3 are omitted and the not shown in FIG. 1.

Referring to FIG. 1, the P⁺-type doped region 13 comprises a rectangularring portion 13A and a finger portion 13B. The finger portion 13B isextended from an interior sidewall of and perpendicular to therectangular ring portion 13A. Moreover, the end region of the fingerportion 13B, not adjoined to the rectangular ring portion 13A, is acurved region. The N⁺-type doped region 14 is disposed in a regionsurrounded by the rectangular ring portion 13A. The N⁺-type doped region14 is U-shaped. The N⁺-type doped region 14 and the P⁺-type doped region13 are interdigitated to one another.

Referring to FIGS. 2 and 3, in one embodiment, a drain voltage VDD (notshown) is applied to the N⁺-type doped region 14, a source voltage VSS(not shown) is applied to the N⁺-type doped region 14A and P⁺-type dopedregion 13, and a gate voltage VG (not shown) is applied to the gatestructure 40. The gate voltage VG is same as the drain voltage VDD.Alternatively, the gate voltage VG and the drain voltage VDD may bedifferent. Therefore, the semiconductor structure shown in FIG.2 may beregarded as an LDMOS device, particularly as a lateral diffused MOS(LDMOS), and the semiconductor structure shown in FIG. 3 may be regardedas a diode device.

In one embodiment, the deposition range of the diode device in FIG. 3 isin a region including the end of the P⁺-type doped finger portion 13B,such as region 70 (indicated with a dotted line) shown in FIG. 1, andthe deposition range of the LDMOS device shown in FIG. 2 is in all theother regions except for the diode device region. However, not limitedto the region 70 that includes the end of the P⁺-type doped fingerportion 13B in FIG. 1A, the diode device range may also be in a regionincluding the end of the finger portion of the N⁺-type doped region 14,such as region 80 (indicated with a dotted line). Similarly, when thediode device is formed in the region 80, the end of the finger portionof the N⁺-type doped region 14 may also have a curved portion. Forconventional techniques, the rectangular portion 13A and finger portion13B of the P⁺-type doped region 13 are both LDMOS devices. However, thefinger end portion of the LDMOS has a high density surface electricfield (crowded electric field), thus reducing breakdown voltage of theLSMOS device and decreasing device lifespan. In embodiments of theinvention, the finger end region is the diode to effectively reducesurface electric field density, thus improving upon a crowded electricfield.

Moreover, in the preferred embodiment, the N-type impurity concentrationdistributions of the N-type well region 11 of LDMOS device of FIG. 2 andthe N-type well region 11 of diode device of FIG. 3 are substantiallydifferent. In N-type well region 11 of diode device of FIG. 3, theimpurity concentration of the N-type well region 1I B below the N⁺-typedoped region 14 is higher than the impurity concentration of the N-typewell region 11A′ below the isolation structure 20 substantially. Thus,the diode structure has field buffering effect. Moreover, the impurityconcentrations of the N-type well region 11B and the N-type well region11 of LDMOS device are substantially the same or similar. However, inother embodiments, the N-type impurity concentration distributions ofthe N-type well region 11 of LDMOS device of FIG. 2 and the N-type wellregion 11 of diode device of FIG. 3 may be the same.

The LDMOS device shown in FIG. 2 is a reduced surface field (RESURF)transistor with lower resistance since the N-type well region 11 underthe isolation structure 20 can effectively reduce RESURF. Moreover, whenoperating the LDMOS, the diode structure in the finger end region 70 inFIG. 3 can reduce electric field generated from the interdigitatedfinger. Particularly, the diode device has higher field buffering effectas the impurity concentration of the N-type well region 11B below theN⁺-type doped region 14 is higher than the impurity concentration of theN-type well region 11A′ substantially below the isolation structure 20.In other embodiments, for example, the LDMOS device may furthercomprises a P-type doped region (not shown) between the isolationstructure 20 and the N-type well region 11, which also can reduceRESURF. Therefore, the LDMOS of the present invention has excellentelectric properties.

FIGS. 4 to 9 illustrate the method for forming the semiconductorstructure shown in FIG. 3. The method for forming the semiconductorstructure in FIG. 2 is not described since which is fabricated with thesemiconductor structure in FIG. 3 at the same time.

Referring to FIG. 4, first, the semiconductor substrate 10 is provided.In one embodiment, the semiconductor substrate 10 may comprise asilicon-on-insulator (SOI) substrate, bulk silicon substrate, or asubstrate having a silicon epitaxy layer thereon. The semiconductorsubstrate 10 may be a first conductive type, such as a P-type or N-type.In this example, the semiconductor substrate 10 is a P⁻-type substrate10.

Then, the P⁻-type body doped region 16 is formed in the P⁻-typesubstrate 10. In one embodiment, the P⁻-type body doped region 16 isformed by doping P-type dopants such as boron, gallium, aluminum,indium, or combinations thereof. The dopant concentration can be variedaccording to manufacturing processes and device characteristics. In oneembodiment, the P⁻-type body doped region 16 is formed by performing adoping process with a patterned mask (not shown).

Referring to FIG. 5, an N-type well region 11B and a plurality of theN-type bar regions 11A are formed in the P⁻-type substrate 10. The widthW of the N-type bar region 11A and the separated distances S of theadjacent N-type bar regions 11A can be varied according to manufacturingprocesses and device characteristics. In the preferred embodiment, thethickness W and the separated distance S are substantially equal. Inother embodiments, the thickness W and the separated distance S aredifferent. The N-type well region 11B and the N-type bar regions 11A maybe formed by doping N-type dopants such as phosphorus, arsenic,nitrogen, antimony, or combinations thereof. The dopant concentrationcan be varied according to manufacturing processes and devicecharacteristics. In the preferred embodiment, the N-type well region 11Band the N-type bar regions 11A are formed at the same time by a dopingprocess using a patterned mask (not shown), without needing extra masksand processes.

Referring to FIG. 6, the isolation structure 20 is formed on the P⁻-typesubstrate 10 for defining the active region. Note that the isolationstructure 20 is not limited to the example of the field oxide layer, andother isolation structures, such as shallow trench isolation structures,may be used.

Referring to FIG. 7, the gate structure 40 is formed on the P⁻-typesubstrate 10. In this example, gate dielectric layer 41 may be formedover a partial surface of the P⁻-type body doped region 16 by, forexample, thermal oxidation, chemical vapor deposition, atomic layer CVD,etc. The gate dielectric layer 41 may comprise a common dielectricmaterial, such as oxide, nitride, oxynitride, oxycarbide, orcombinations thereof. Alternatively, the gate dielectric layer 41 maycomprise a high-k (>8) dielectric material, such as aluminum oxide(Al₂O₃), hafnium oxide (HfO₂), hafnium oxynitride (HfON), hafniumsilicate (HfSiO₄), zirconium oxide (ZrO₂), zirconium oxynitride (ZrON),zirconium silicate (ZrSiO₄), yttrium oxide (Y₂O₃), lanthalum oxide(La₂O₃), cerium oxide (CeO₂), titanium oxide (TiO₂), tantalum oxide(Ta₂O₅), or combinations thereof. Then, the gate electrode layer 42 maybe formed on the gate dielectric layer 41 by deposition methods such asa CVD deposition method. The gate electrode layer 42 may comprisesilicon or polysilicon. The gate electrode layer 42 is preferably adoped material for reducing sheet resistance. In other embodiments, thegate electrode layer 42 is amorphous silicon. Furthermore, a metalsilicide may be selectively formed on the surface of the gate electrodelayer 42.

The gate structure 40 is formed on the substrate 10 by covering of apatterned photoresist (not shown) and then removing a portion of thegate dielectric layer 41 and gate electrode layer 42 by non-isotropicetching. Then, the patterned photoresist is removed. Referring to FIG.7, the gate structure 40 formed on the P⁻-type substrate 10 covers aportion of the isolation structure 20 and P⁻-type body doped region 16.

Referring to FIG. 8, the P⁺-type doped region 13 is formed in theP⁻-type body doped region 16. Particularly, the P⁺-type doped region 13is formed in the upper portion of the P⁻-type body doped region 16. Inone embodiment, the P⁺-type doped region 13 may be formed by dopingP-type dopants such as boron, gallium, aluminum, indium, or combinationsthereof. The dopant concentration can be varied according tomanufacturing processes and device characteristics. In one embodiment,the P⁺-type doped region 13 is formed by performing a doping processwith a patterned mask (not shown).

Referring to FIG. 9, the N⁺-type doped region 14 is formed in the N-typewell region 11B. Particularly, the N⁺-type doped region 14 is formed inthe upper portion of the N-type well region 11B. In one embodiment, theN⁺-type doped region 14 may be formed by doping N-type dopants such asphosphorus, arsenic, nitrogen, antimony, or combinations thereof. Thedopant concentration can be varied according to manufacturing processesand device characteristics. In one embodiment, the N⁺-type doped region14 is formed by performing a doping process with a patterned mask (notshown). At the same time, in FIG. 2, the N⁺-type doped region 14Abetween the P⁺-type doped region 13 and P⁻-type body doped region 16below the gate structure 40 is formed by this step. Therefore, the MOSdevice and diode device are fabricated by using the same process. Extramasks and process are not necessary, thus reducing costs.

In one embodiment, an annealing step may be performed, preferably afterthe above described steps, for laterally diffusing the dopant of theplurality of the N-type bar regions 11A to form a continuous (orlightened) N-type well region, such as the N-type well region 11A′ shownin FIG. 3. Not limited to being performed after all the elements areformed, the annealing step may be performed after forming the N-typewell region 11B and the N-type bar regions 11A and before the subsequentsteps. In other embodiments, the annealing step may be performed in anysuitable condition.

Referring to FIG. 3, in this example, the N-type well region 11A′ isadjoined with the N-type well region 11B and P⁻-type body doped region16. In other embodiments, the first sidewall of the N-type well region11A′ is adjoined to the N-type well region 11B, the opposite secondsidewall is disposed below the isolation structure 20 and gatedielectric layer 41 and not contacted with the P⁻-type body doped region16 (not shown). The net N-type carrier concentration of the N-type wellregion 11A′ is lower than the net N-type carrier concentration of theN-type well region 11B due to laterally-diffusing of the N-typeimpurities of the N-type bar regions 11A and P-type impurities of theadjacent P⁻-type substrate 10. The dopant concentration of the N-typewell region 11A′ and 11B can be varied according to manufacturingprocesses and device characteristics.

Referring to FIG. 3, the formation range and dopant concentration of theN-type well region 11A′, N-type well region B, P⁻-type body doped region16, and P⁻-type substrate 10 may be varied properly according to theRESURF technique. Similarly, In the MOS structure in FIG. 2, theformation range and dopant concentration of the N-type well region 11,P⁻-type body doped region 16, and P⁻-type substrate 10 may also bevaried properly according to the RESURF technique.

Some advantages of the semiconductor structure and fabrication methodthereof of the invention are described in the following. In theinterdigitated P⁺-type doped region and the N⁺-type doped region, thediode structure is formed in the region (or interdigitated region)comprising the finger end, and the LDMOS structure is formed in all theother regions. When the device operates, the diode structure in theinterdigitated region can reduce electric field generated from thefinger portion. Particularly, the diode structure has much fieldbuffering effect as the impurity concentration of the N-type well regionbelow the N⁺-type doped region is higher than the impurity concentrationof the N-type well region below the isolation structure substantially.

In addition, by lightening the dopant concentration of the N-type wellregion below the gate structure to be smaller than the dopantconcentration of the N-type well region below the N⁺-type doped region,an N-type well region and a plurality of the N-type bar regions aresimultaneously formed in the substrate by a doping process with a mask.Then, the N-type bar regions are diffused to form a continuous N-typewell region by an annealing (or thermally driving-in) step. Moreover,the continuous N-type well region formed below the gate structure isadjoined with the N-type well region below the N⁺-type doped region.Thus, extra masks and process are not necessary and costs are reduced.

While the invention has been described by way of example and in terms ofthe preferred embodiments, it is to be understood that the invention isnot limited to the disclosed embodiments. To the contrary, it isintended to cover various modifications and similar arrangements (aswould be apparent to those skilled in the art). For example, whendescribing one embodiment of an N-LDMOS, another embodiment can be aP-LDMOS. Therefore, the scope of the appended claims should be accordedthe broadest interpretation so as to encompass all such modificationsand similar arrangements.

1. A method for forming a semiconductor structure, comprising: providinga first type substrate; forming a first type body doped region in thefirst type substrate; forming a second type well region and a pluralityof second type bar regions in the first type substrate, wherein thesecond type bar regions are disposed between the second type well regionand the first type body doped region, and the first type body dopedregion, the second type well region, and each of the second type barregions are separated to one another by the first type substrate;forming a first type heavily-doped region in the first type body dopedregion; forming a second type heavily-doped region in the second typewell region; diffusing the second bar regions to form a second typecontinuous region adjoined to the second type well region by annealing;forming an isolation structure on the first type substrate; and forminga gate structure on the first type substrate.
 2. The method for formingthe semiconductor structure as claimed in claim 1, wherein a width ofthe second type bar region W and a separated distance S between theadjacent second type bar regions are equal.
 3. The method for formingthe semiconductor structure as claimed in claim 1, wherein a width ofthe second type bar region W and a separated distance S between theadjacent second type bar regions are different.
 4. The method forforming the semiconductor structure as claimed in claim 1, wherein theisolation structure is disposed between the first type heavily-dopedregion and second type heavily-doped region.
 5. The method for formingthe semiconductor structure as claimed in claim 1, wherein a second typeimpurity concentration of the second type continuous region is lowerthan a second type impurity concentration of the second type wellregion.
 6. The method for forming the semiconductor structure as claimedin claim 1, wherein the gate structure covers a portion of the isolationstructure and the first type body doped region.
 7. The method forforming the semiconductor structure as claimed in claim 1, wherein thesecond type continuous region is adjoined with the first type body dopedregion.
 8. The method for forming the semiconductor structure as claimedin claim 1, wherein the first heavily-doped region comprises arectangular ring portion and a finger portion, and the finger portion isextended from an interior sidewall of and perpendicular to therectangular ring portion.
 9. The method for forming the semiconductorstructure as claimed in claim 8, wherein the second type heavily-dopedregion is U-shaped and is deposited in a region surrounded by therectangular ring portion of the first type heavily-doped region.
 10. Themethod for forming the semiconductor structure as claimed in claim 9,wherein the finger portion of the first type heavily-doped region andthe U-shaped second type heavily-doped region are interdigitated to oneanother.
 11. The method for forming the semiconductor structure asclaimed in claim 1, wherein the second type well region and second typebar regions are formed by a doping step using the same mask.
 12. Asemiconductor structure, comprising: a first type substrate; a firsttype body doped region on the first type substrate; a first typeheavily-doped region on the first type body doped region; a second typewell region on the first type substrate; a plurality of second type barregions between the second type well region and the first type bodydoped region, wherein the first type body doped region, the second typewell region, and each of the second type bar regions are separated toone another by the first type substrate; a second type heavily-dopedregion on the second type well region; an isolation structure on thefirst type substrate between the first type heavily-doped region andsecond type heavily-doped region; and a gate structure on the first typesubstrate between the first type heavily-doped region and isolationstructure.
 13. The semiconductor structure as claimed in claim 12,wherein the first heavily-doped region comprises a rectangular ringportion and a finger portion, and the finger portion is extended from aninterior sidewall of and perpendicular to the rectangular ring portion.14. The semiconductor structure as claimed in claim 13, wherein thesecond type heavily-doped region is U-shaped and is deposited in aregion surrounded by the rectangular ring portion of the first typeheavily-doped region.
 15. The semiconductor structure as claimed inclaim 14, wherein the finger portion of the first type heavily-dopedregion and the U-shaped second type heavily-doped region areinterdigitated to one another.
 16. The semiconductor structure asclaimed in claim 12, wherein the gate structure covers a portion of theisolation structure and the first type body doped region.
 17. Thesemiconductor structure as claimed in claim 12, wherein a width of thesecond type bar region W and a separated distance S between the adjacentsecond type bar regions are equal.
 18. The semiconductor structure asclaimed in claim 12, wherein a width of the second type bar region W anda separated distance S between the adjacent second type bar regions aredifferent.
 19. A semiconductor structure, comprising: a first typesubstrate; a first type body doped region on the first type substrate; afirst type heavily-doped region on the first type body doped region; asecond type well region on the first type substrate; a diffused secondtype well region between the second type well region and first type bodydoped region and adjoined to the second type well region, wherein asecond type impurity concentration of the diffused second type wellregion is lower than a second type impurity concentration of the secondtype well region; a second type heavily-doped region on the second typewell region; an isolation structure on the diffused second type wellregion; and a gate structure on the first type substrate between thefirst type heavily-doped region and isolation structure.
 20. Thesemiconductor structure as claimed in claim 19, wherein the firstheavily-doped region comprises a rectangular ring portion and a fingerportion, and the finger portion is extended from an interior sidewall ofand perpendicular to the rectangular ring portion.
 21. The semiconductorstructure as claimed in claim 20, wherein the second type heavily-dopedregion is U-shaped and is deposited in a region surrounded by therectangular ring portion of the first type heavily-doped region.
 22. Thesemiconductor structure as claimed in claim 15, wherein the fingerportion of the first type heavily-doped region and the U-shaped secondtype heavily-doped region are interdigitated to one another.
 23. Thesemiconductor structure as claimed in claim 19, wherein the gatestructure covers a portion of the isolation structure and the first typebody doped region.
 24. The semiconductor structure as claimed in claim19, wherein the diffused second type well region is adjoined to thefirst type body doped region.